BAW56
Document number: DS12008 Rev. 21 - 2
2 of 4
www.diodes.com
July 2012
? Diodes Incorporated
BAW56
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
VRM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Voltage
VR(RMS)
53 V
Forward Continuous Current (Note 5)
IFM
300 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
2.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
PD
350 mW
Thermal Resistance Junction to Ambient Air (Note 5)
RθJA
357
°C/W
Operating and Storage Temperature Range
TJ , TSTG
-65 to +150
°C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
75
?
V
IR = 2.5μA
Forward Voltage
VF
?
0.715
0.855
1.0
1.25
V
IF
= 1.0mA
IF
= 10mA
IF
= 50mA
IF
= 150mA
Reverse Current (Note 6)
IR
?
2.5
50
30
25
μA
μA
μA
nA
VR
= 75V
VR
= 75V, T
J
= +150
°C
VR
= 25V, T
J
= +150
°C
VR
= 20V
Total Capacitance
CT
?
2.0 pF VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
4.0 ns IF
= I
R
= 10mA,
Irr = 0.1 x IR, RL
= 100
Ω
Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
400
T , AMBIENT TEMPERATURE, (°C)A
Fig. 1 Power Derating Curve, Total Package
P
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
,
200
100
300
0
500
0
100
200
Note 5
0.1
1
0.01
0.001
010.5
1.0
.5
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Fig. 2 Typical Forward Characteristics, Per Element
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